The global quantum internet will require long-lived, telecommunications-band photon–matter interfaces manufactured at scale. Preliminary quantum networks based on photon–matter interfaces that meet a subset of these demands are encouraging efforts to identify new high-performance alternatives. Silicon is an ideal host for commercial-scale solid-state quantum technologies. It is already an advanced platform within the global integrated photonics and microelectronics industries, as well as host to record-setting long-lived spin qubits. Despite the overwhelming potential of the silicon quantum platform, the optical detection of individually addressable photon–spin interfaces in silicon has remained elusive. In this work, we integrate individually addressable ‘T centre’ photon–spin qubits in silicon photonic structures and characterize their spin-dependent telecommunications-band optical transitions. These results unlock immediate opportunities to construct silicon-integrated, telecommunications-band quantum information networks.



Optical observation of single spins in silicon

T centres in photonic silicon-on-insulator material

Silicon-Integrated Telecommunications Photon-Spin Interface


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